Current-Voltage Characteristic of Semi-Insulating GaAs, with Trap-Filling Effect

Field effect on positron diffusion in semi-insulating GaAs.

Scanning tunneling microscopy and spectroscopy of semi-insulating GaAs

N. D. Jäger, Ph. Ebert, K. Urban, R. Krause-Rehberg, and E. R. Weber Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany Fachbereich Physik, Martin-Luther-Universität Halle, 06099 Halle, Germany Department of Materials Science, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 ~Received ...

Verification of EL2 electronic absorption effect on charge transfer in semi-insulating GaAs.

The electronic absorption of EL2 centers has been clarified to be related to the electron and hole photoionizations, and the transition from its ground state to metastable state, respectively. Under an illumination with a selected photon energy in the near infrared region, these three processes with different optical cross sections will show different kinetics against the illumination time. It ...

Effect of Multistep Wafer-Annealing on Main Traps in Czochralski-Grown Semi-Insulating GaAs

Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling t...